Dongbu HiTek announced that it will manufacture
low-frequency receiver ICs for Micro Analog
Systems Oy (MAS), a fabless analog semiconductor
company based in Espoo, Finland. The chips,
manufactured at Dongbu HiTek's world-class wafer
fab using a specialized bipolar/CMOS/DMOS
(BCDMOS) process at the 0.35μm node, will serve
as a core component in global radio-controlled
time-signal applications. According to Dongbu
HiTek, MAS' receiver chips are designed to enable
accurate real-time capture of radio transmissions
from time-signal stations around the world. The
chip significantly captures time calibration data
via low-frequency (long wave) transmissions
regardless of the transmitter receiver's location. As
a result, low-frequency communications overcome
limitations associated with the use of high-frequency
(short wave) techniques.
For additional information, contact:
(T) 82-2-3484-2842
(E) koreasales@dsemi.com
(W) www.dongbuhitek.com
Fujitsu Microelectronics, a leading global
semiconductor supplier, offers a wide range
of process technologies, design solutions and
advanced packaging services to customers.
Customers can access the company's CMOS
process platforms, from 180nm to 65nm, and
design intellectual property (IP) either through
convenient full turnkey application-specific IC
(ASIC) or cost-effective customer-owned tooling
(COT) engagement. In addition, Fujitsu's liquid
crystal-on-silicon (LCOS) process technologies
developed for emerging pico projector and
electronic view finder applications are also
available to COT customers. Fujitsu's advanced
packaging technology, including multi-chip
modules and die stacking, is an ideal solution for
applications where multiple chips are required to
meet system requirements.
For additional information, contact:
David Fung
(E) dfung@fma.fujitsu.com
(W) www.fujitsumicro.com
GLOBALFOUNDRIES announced that it
has officially integrated operations with
Chartered Semiconductor Manufacturing and
started functioning as one company under
the GLOBALFOUNDRIES brand. The
announcement marks the emergence of the
new GLOBALFOUNDRIES, the world's first
full-service semiconductor foundry with a truly
global manufacturing and technology footprint
across Asia, Europe and the United States. The
combined company employs approximately
10,000 people around the world, anchored by
headquarters in Silicon Valley and advanced
manufacturing operations in Singapore;
Dresden, Germany; and a new leading-edge
fab under construction in Saratoga County,
New York. These sites are supported by a global
network of research and development (R&D),
design enablement, and customer support in
Singapore, China, Taiwan, Japan, the United
States, Germany and the United Kingdom.
For additional information, contact:
(T) 408-462-3900
(E) global.sales@globalfoundries.com
(W) www.globalfoundries.com
Grace Semiconductor Manufacturing, one
of the leading semiconductor foundries for
differentiated technologies, has successfully
developed an advanced 45V lateral-diffused
metal-oxide semiconductor (LDMOS) process
for power management based on its stable
0.18μm logic baseline. Compared with legacy
nodes, the 0.18μm logic baseline allows a much
higher level of integration of digital circuits,
fulfilling the requirements of system-on-chip
(SOC) and smart power applications. Grace's
mature 0.18μm logic process offers customers
a complete process design kit (PDK) with great
model accuracy which significantly shortens
design cycle time and therefore accelerates ramp-up.
It also provides customers with alternative
generic and low-power baseline options.
For additional information, contact:
(T) 86-21-5080-8888
(E) contact@gracesemi.com
(W) www.gracesemi.com
IBM announced the availability of a variety of
features and technologies aimed at helping clients
drive circuit innovation in mobile handsets. The
new offerings are part of IBM's 180nm suite of
analog/mixed-signal foundry technologies and
are primarily focused on driving innovation and
integration in the handset radio function. These
features provide fabless clients the flexibility to
create new architectures and circuit topologies
to help reduce power, size and cost to meet the
demands of 3G/4G multi-mode/multi-band
handsets. They are a result of IBM's collaborative
innovation initiative in working with clients
to bring game-changing technologies to the
marketplace. The offerings complement IBM's
already rich set of technologies and aim to
further enhance the 180nm node for additional
market applications. The added features and
enablement include thick copper (Cu) back-end
metal levels, through-silicon via (TSV)
technology, radio frequency (RF) silicon-on-insulator
(SOI) programmable signal processor
(PSP) models, an integrated passives technology
(IPD5PAe) and 180nm-thick SOI technology
(CSOI7TF). Validated PDKs with the enhanced
features are available today.
For additional information, contact:
Peter Rabbeni
(T) 919-654-6330
(E) rabbeni@us.ibm.com
(W) www.ibm.com
LFoundry is a leading analog and mixed-signal
silicon foundry with a 200mm production line
based in Landshut, Germany providing access
to manufacturing services down to advanced
analog 0.15μm CMOS technologies with
innovative extensions. Based in the heart of
Europe, LFoundry is in an excellent position
to support a wide portfolio of applications,
especially when it comes down to high flexibility
and the customization of technologies.
For additional information, contact:
(T) 49-871-6840606
(E) sales@lfoundry.com
(W) www.lfoundry.com
MagnaChip Semiconductor, a leading Asia-based
designer and manufacturer of analog
and mixed-signal semiconductor products
for high-volume consumer applications, and
Microsemi, a leading manufacturer of high-performance
analog/mixed-signal ICs and
high-reliability semiconductors, announced
that they have partnered to develop advanced
mixed-signal process technology that is
optimized for products in Microsemi's key
commercial growth markets. The new process is
electrically compatible with MagnaChip's own
0.35μm baseline process that is already used by
Microsemi to manufacture current products.
For additional information, contact:
Chankeun Park
(T) 82-2-6903-3195
(E) chankeun.park@magnachip.com
(W) www.magnachip.com
Riding on the recent surge in the global demand
of smartphones, SilTerra Malaysia's advanced
high-voltage technology is well positioned to
capture this fast-growing market. The latest
0.11μm high-voltage process offers the finest
static random access memory (SRAM) bit cell
suitable for ultra high-resolution display in
Half-size Video Graphics Array (HVGA), Noise
Half Delta (nHD) and Wide Video Graphics
Array thin-film transistor (WVGA TFT) panels.
The CL110H32 technology features triple-gate
oxides with five metal layers of aluminum
interconnect. In addition, the technology offers
asymmetry high-voltage well for denser design,
one-time programmable (OTP) cell for gamma
color tuning and voltage trimming, electrostatic
discharge (ESD) protection circuitry, and
metal capacitors design guideline. A complete
foundry design kit (including design rules,
models, PDK and design tool tech files) and
design libraries (including standard cells, input/output (I/O) cells and SRAM) are now available
for customers to start the design.
For additional information, contact:
Meng Kong Koh
(T) 604-401-4166
(E) mengkong_koh@silterra.com
(W) www.silterra.com
With Taiwan Semiconductor Manufacturing
(TSMC) adding a low-power process to its 28nm
high-k metal gate roadmap in the last year, the
company is closely working with customers
and ecosystem partners to build comprehensive
partnerships on the 28nm process node. The
advanced process node enables more features to
be integrated into smaller chips with a high level
of cost efficiency, accelerating the expansion
of wireless into new market segments. A
recent deal was announced with Qualcomm,
establishing a close relationship between the
two partners on 28nm process technology.
The new process is expected to enter
risk production in Q3 2010. TSMC's 28nm
development and ramp has remained on
schedule since the company announced the
technology in September 2008. The company
plans to further discuss both 28nm and 40nm
at the TSMC Technology Symposiums in April
2010.
For additional information, contact:
Ferda Mehmet
(T) 415-308-7877
(E) ferda.mehmet@ar-edelman.com
(W) www.tsmc.com
Tower and Jazz Semiconductor announced
major achievements in the first year of
their merger and launched a new company
brand, TowerJazz, at its annual technology
conference. Also, the foundry signed a definitive
agreement with an Asian entity to provide
know-how, training and turnkey manufacturing
solutions at revenue of $130 million.
VT Silicon chose TowerJazz's 0.18μm SiGe
process for the world's first fully integrated 4G
RF front-end IC. As well, Phasor selected the
foundry's high-performance SiGe BiCMOS
process for its innovative transceiver chipset for
mobile broadband service on moving platforms.
TowerJazz was also selected as the preferred
foundry by Korea's C&S Technology for power
automotive devices for Hyundai and Kia Motor
Company.
CMOSIS announced it chose TowerJazz's
CMOS imaging process for its first off-the-shelf
high-resolution sensor. In addition,
National Aeronautics and Space Administration
(NASA) selected TowerJazz and the Advanced
Science and Novel Technology Company
(ADSANTEC) for its Lunar Atmosphere and
Dust Environment Explorer (LADEE) mission.
For additional information, contact:
Melinda Jarrell
(T) 949-435-8181
(E) melinda.jarrell@towerjazz.com
(W) www.towerjazz.com
United Microelectronics (UMC) began
equipping its 300mm Fab 12i in Singapore
for 40nm production, and will expand
manufacturing capacity from 31,000 to 41,000
wafers per month in the coming months.
This will be the foundry's second 300mm fab
with 40nm capabilities. The company is also
re-defining the limitation of state-of-the-art
8-inch CMOS technologies with the aggressive
development of aluminum back-end-of-line
(Al-BEOL)-related technologies, leading the
industry into a brand new era of diversified
CMOS applications, including logic/mixed-mode
(MM), RFCMOS, drain-extended
metal-oxide semiconductor (DEMOS), lateral-diffused metal-oxide semiconductor (LDMOS),
conductor-insulator-semiconductor (CIS),
microelectromechanical systems (MEMS),
embedded memories, etc. These modern green
technologies will enable new functionality and
features for everyday applications.
For additional information, contact:
(T) 886-3-578-2258
(E) sales@umc-usa.com
(W) www.umc.com
The X-FAB Group recently expanded its
0.35μm technology offerings with the first
foundry technology optimized for Blu-ray
and high-speed optical data communication
applications. Dubbed XO035, the new 0.35μm
process includes a unique blue PIN module
which enables the design of high-performance
photo detectors. The PIN diode offers the
highest sensitivity for blue light in the market,
about 0.31 Amperes per Watt, which is close to
the physical limit. Available now, the XO035
is ideal for all applications for which high
sensitivity and high bandwidth are crucial, such
as photo detector ICs (PDICs) for Blu-ray and
other optical data storage applications, optical
data communication devices and high-dynamic
range cameras.
For additional information, contact:
(T) 408-844-0066 ext. 101
(E) info@xfab.com
(W) www.xfab.com
