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The Future of Embedded Flash

Kilopass

Lee Cleveland, Vice President, Engineering, Kilopass

Differentiation and time-to-market have always been the cornerstones of success for chip companies. Embedded Flash has played an important role in enabling competitive products by providing flexibility and a higher level of integration to the system-on-chip (SOC). At 90nm and above, embedded Flash is prevalent in many applications, ranging from code storage in power window controllers to secure key storage in smartcards. But at 65nm and below, there is currently no viable embedded Flash solution available. A solution will be needed as products migrate to more advanced process geometries in the next few years. In this article, possible non-volatile memory (NVM) technologies to enable embedded Flash at 65nm and below will be explored, including magnetoresistive random access memory (MRAM), silicon-oxide-nitride-oxide-silicon (SONOS), resistive random access memory (RRAM) and antifuse.

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How to Choose the Right DRAM for an Application

ISSI

Pat Lasserre, Director, Strategic Marketing, Integrated Silicon Solution Inc. (ISSI)

While price and density play large roles in selecting dynamic random access memory (DRAM), many other considerations must be taken into account. For example, long-term product support is a key consideration for many applications. Manufacturers of products with long product lifecycles, such as network infrastructure and automotive products, require lasting product support. The DRAM market's transition to double data rate, third generation (DDR3) will have implications for many of these manufacturers.

In addition to long-term product support requirements, networking and automotive manufacturers also have stringent quality and wide temperature range requirements. With this in mind, some chip vendors are taking measures to improve product reliability and to widen supported temperature ranges.

For many handheld and mobile products, form factor and power consumption are key considerations. This is driving demand for known good die (KGD) DRAM that minimizes both active and standby power to extend battery life.

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PDF Version
GSA Forum: Vol. 16 No. 1 March 2009
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March 2010 GSA Forum PDF
Interviews

KHEIN-SENG PUA
Chairman
Phison Electronics Corporation

JAMES O'RIORDAN

With a one-of-a-kind memory business model, Phison Electronics met with great success in 2009 and optimistically looks forward to having another thriving year. GSA sat down with Khein-Seng Pua, chairman of Phison Electronics, to discuss how its customers benefit from the company's unique expertise; what markets will fuel the growth of NAND Flash; the increasing need for data security solutions; and much more.

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EDWARD DOLLER
Vice President & Chief Technology Officer
Numonyx B.V.

DR. OLIVIER BRIÈRE

Despite being one of the hardest hit semiconductor markets during the global economic downturn,
Numonyx's recent breakthrough technology advancements and new market opportunities provide
optimism that the memory industry will successfully rebound. GSA sat down with Edward Doller, vice president and chief technology officer of Numonyx, to discuss why the company flourished during the financial crisis; the cost/value trade-off involving new technologies and how they will gain market share; the future of the solid-state device (SSD) market; and much more.

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