45500 Northport Loop West Fremont CA 94538 USA
T (510) 933-8200 F (510) 933-8201 www.spinmemory.com/
Spin Memory (previously Spin Transfer Technologies) is developing spin-transfer torque (STT)-MRAM technologies and products that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. Spin Memory has developed breakthrough technologies in both magnetics and CMOS circuits and architectures that bring STT-MRAM to the next generation. The result: MRAM operating speeds matching those of SRAM cache memories or DRAM -- but with far lower cost, no leakage power and without the endurance and data retention limitations of other STT-MRAM implementations.
Spin Memory - with strategic partners Applied Materials and Arm - offers a full suite of MRAM technologies for both manufacturers and designers:
o Foundries and Memory Manufacturers can improve the speed and efficiency of their own existing MRAM offerings, or can procure an entire MRAM solution for RAM-replacement as well as NVM.
o Memory designers - both stand-alone and embedded - can achieve SRAM speed and endurance using the company's Endurance Engine and other advanced design capabilities.
Products / Services Offered
- Tom Sparkman - CEO
- Antoine Bruyns - CFO
- Mustafa Pinarbasi - CTO & Senior VP, Magnetics Technology
- Lester Crudele - Senior VP, IC Product Development
- Dr. Amitay Levi - VP, Memory Integration
- Jeff Lewis - Senior VP, Business Development
- Adrian Ong - Vice President, Engineering
- Andrew Walker - VP, Product
- Steven Watts - Senior Director, Test