Weebit Nano, a leading developer of next-generation memory technologies for the global semiconductor industry, has taped-out demonstration chips integrating its embedded Resistive Random-Access Memory (ReRAM) module in an advanced 22nm FD-SOI process technology. Weebit worked with its development partners CEA-Leti and CEA-List to successfully scale its ReRAM technology down to 22nm. The teams designed a full IP memory module that integrates a multi-megabit ReRAM block targeting the 22nm FD-SOI process which is designed to deliver outstanding performance for connected and ultra-low power applications such as IoT and edge AI. Weebit ReRAM in 22nm FD-SOI offers a low-power, cost-effective embedded NVM solution which can withstand harsh environmental conditions.