MEMS Working Group

  • Overview
  • Meeting Schedule
  • Presentations
  • Minutes
  • Projects
  • News


What's New in this Group?

The MEMS industry has seen tremendous advancements in recent years and is one of the fastest growing segments in the semiconductor product industry.  In order to keep this pace, new applications and market segments have to be continuously identified.  In addition, with the downward price pressure and shorter time-to-market needs brought on by the consumer, efficiencies in design, manufacturing, integration, software development and related processes need to be realized. The MEMS Working Group was formed to address these challenges on an industry-wide scale.


To provide a neutral forum where members can exchange ideas, stimulate thought, and collaborate on solutions to have a positive impact on the growth and profitability of the MEMS industry.


To bring together leading representatives from the MEMS industry and semiconductor design to (1) collaborate on solutions that improve the technical and economic landscape in design and manufacturing, and  (2) discuss commercial requirements for new applications, market segments and growth areas  to address the cost down and time-to-market demands of the end customer.

  • Continually identify and explore key application areas that are expected to drive the growth of the MEMS industry over a rolling five year period
  • Identify and promote areas of collaboration for integration of MEMS into multi-disciplinary systems
  • Help identify economies of reuse through homogenization of design and manufacturing resources (versus a “one product, one process, one package” mentality)
  • Help identify other areas of improvement in design, manufacturing or processes that help to reduce product costs and accelerate time to market

Contact Information

Harrison Beasley
Director, Technology

Working Group Chair
Maarten Vranes, MEMS Journal

Meeting Schedule

What's New in this Group?
Q1 2015 Meeting

MEMS Working Group Meeting
Host: Qualcomm
Date: March 26, 2015
Time: 9:30 am  – Noon
Location: 3165 Kifer Rd, Bldg B, San Jose, CA

Overview & Registration

MEMS Executive Congress Europe – March 9-10 in Copenhagen, Denmark
This Congress is aimed at Executives (Presidents, VPs, directors, CEOs, etc) who are interested in making business connections, from device manufactures and foundries, to end-users, buyers of MEMS and sensor technologies, R&D, and others.

MEMS Technical Congress – May 6-7 in Boston, MA
This Congress is aimed at those in the technical field who are interested in finding solutions to the problems that face MEMS and Sensors. This is a hands-on Congress of task forces and working groups that have produced successful deliverables in the past. While the Executive Congress is for business relations, the Technical Congress is to come together as an industry, rather than as competitors, and work to solve the issues that the industry faces.

Q2 2015 Meeting

MEMS Working Group Meeting
Host: Qualcomm
Date: June 18, 2015
Time: 9:30 am  – Noon
Location: 3165 Kifer Rd, Bldg B, San Jose, CA

Q3 2015 Meeting

MEMS Working Group Meeting
Host: Qualcomm
Date: September 23, 2015
Time: 9:30 am  – Noon
Location: 3165 Kifer Rd, Bldg B, San Jose, CA

Q4 2015 Meeting

MEMS Working Group Meeting
Host: Qualcomm
Date: December 12, 2015
Time: 9:30 am  – Noon
Location: 3165 Kifer Rd, Bldg B, San Jose, CA


What's New in this Group?

March 26, 2015

Dec 10, 2014

Sep 9, 2014

Jun 18, 2014

Mar 26, 2014

Sep 25, 2013

Jun 12, 2013

Mar 20, 2013

Dec 12, 2012

Nov 7, 2012

Sept 26, 2012

Jun 18, 2012


What's New in this Group?
2014 Meeting Minutes
2013 Meeting Minutes
2012 Meeting Minutes


MEMS Projects Page


What's New in this Group?

PDKs Can Enable an Open Market for Interposer and 3D Solutions
Tuesday, November 25, 2014
3D InCites
As an integral part of the established integrated circuit (IC) supply chain, Outsourced Assembly and Test (OSAT) companies offer IC packaging services on the open market, independent of the chip manufacturer or foundry. OSATs are a subset of the total worldwide IC packaging market, since some IC package assembly is still performed in-house at integrated semiconductor manufacturers (ISM).

Texas Instruments announces 22B copper wire bond technology units shipped
Friday, October 17, 2014
Solid State Technology
Texas Instruments today announced it has shipped more than 22 billion units of copper wire bonding technology from its internal assembly sites and is now in production for major high reliability applications including automotive and industrial. The majority of TI's existing analog and CMOS silicon technology nodes have been qualified with copper, and all new TI technologies and packages are being developed with copper wire bond. Along with its quality, reliability and cost benefits, copper wire offers equal or better manufacturability compared to gold. It also delivers 40 percent higher electrical conductivity to give customers a boost in overall product performance with a number of TI's analog and embedded processing parts.

Litho Options Sparse After 10nm
Thursday, October 16, 2014
Semiconductor Engineering
With EUV's viability still uncertain, multi-patterning may be the cheapest option at 7nm. Beyond that, 3D architectures could be a game changer. Leading-edge foundries are ramping up their 16nm/14nm logic processes, with 10nm and 7nm in R&D. Barring a major breakthrough in Lithography [KC], chipmakers will use 193nm immersion and multiple patterning for both 16nm/14nm and 10nm.

200mm fabs: Older but thriving
Wednesday, October 15, 2014
EETimes Asia
With shrinking device geometries, semiconductor companies are upgrading to larger wafer sizes to reap cost benefits resulting from larger number of dice per wafer. Worldwide, many fabs moved to 300mm wafers more than a decade ago, and Europeans are now talking about the 450mm transition as "opportunities for Europe." The case notwithstanding, there is still plenty of life remaining in 200mm fabs, according to IC Insights, noting that not all semiconductor devices can take advantage of the cost savings 300mm wafers can provide.

Designing in 3D? Don't Make These DFT Mistakes
Wednesday, October 8, 2014
3D InCites
The semiconductor industry hasn't adopted 3D ICs as quickly as many in the industry expected. There are some barriers that perhaps have kept the cost/benefit analysis stuck in the 'scaling' camp rather than moving it to the '3D' camp. However, many companies are preparing for the move to 2.5D and 3D in the future. From a DFT perspective, the barriers are actually quite low; designers have methodologies now to stack their memory on logic, including the ability to test stacked ICs. The test strategy for 3D ICs has two goals: to support high yields and to establish plug-and-play DFT and test patterns. From our DFT perspective, there are a few mistakes you can avoid when thinking about designing, or beginning the design, of 3D ICs.

MEMS treads logic road
Wednesday, August 6, 2014
EETimes Asia
Across the industry, it is becoming more and more evident that the MEMS sector will follow a similar path to CMOS logic. That path is one in which integrated device manufacturers (IDMs) that do everything thing under one roof will progressively give way to those choosing one side or other of a dual fabless-foundry business model, where there are those that specialise in manufacturing in volume and those that specialise in design.

TSMC Details Family of Chip Stacks
Thursday, April 24, 2014
EE Times
TSMC's recent symposium in San Jose described a broad family of 2.5-D and 3-D ICs that exceeded my expectations. The company presented its work on chip stacks as one part of a broad overview of its technology portfolio for a North American market that makes up 74% of its foundry business.

3D EDA brings together proven 2D solutions
Thursday, April 17, 2014
Semiconductor Manufacturing & Design
With anticipated economic limits to the continuation of Moore's Law now on the horizon, it seems that moving into the 3rd dimension (3D) by stacking multiple layers of integrated circuits (IC) will be the ultimate expression of CMOS technology. Whether stacking heterogeneous chips using through-silicon vias (TSV), or monolithic approaches to forming multiple active IC layers on a single silicon substrate, 3D ICs should be both smaller and faster compared to functionally equivalent 2D chips and packages.

GLOBALFOUNDRIES and Samsung join forces on 14nm finFETs
Thursday, April 17, 2014
Semiconductor Manufacturing & Design
Fabless companies could skip the 20nm node and move straight to 14nm FinFETs. That is the hope of GLOBALFOUNDRIES and Samsung who are announcing a joint program that offers a single process design kit (PDK) and manufacturing at four different fabs with identical processes.The PDKs are available now, and 14nm manufacturing could move into high volume production by the end of the year. "This is unprecedented," said Kelvin Low, senior director of marketing at Samsung. "It never has happened in the industry, especially at the very leading edge nodes. We are confident that this will transform the supply chain model," he added. Fabless companies such as Qualcomm have been lobbying for such multi-sourcing for some time, and are eager to move to FinFETs which offer higher performance and reduced power consumption. The 14nm FinFET offer a 20% improvement in performance and a 35% reduction in power compared to 20nm technology.

Fast & Accurate Thermal Analysis of 3D-ICs
Monday, April 14, 2014
As Moore's law started saturating on a single semiconductor die, the semiconductor community came up with the approach of growing vertically by stacking dies one above other in a 3D-IC arrangement. However, a major concern with a 3D-IC is that the heat generated by each die can get trapped in the stack, and hence it's extremely important to accurately model the thermal map of Chip-Package-System (CPS) as a whole in order to manage the heat in a 3D-IC. Accurate thermal profiling is necessary for right placement of thermal sensors, Tmax control and thermal-aware EM sign-off. The thermal responses are coupled with power map (especially at 28nm and below) due to leakage current in device layers and self-heating of interconnect wires. Considering the practical situations, a dynamic thermal analysis along with accounting of time factor due to thermal capacitance of the package and system can provide a realistic approach to thermal analysis in 3D-ICs.

FinFET Custom Design
Wednesday, April 2, 2014
At CDNLive, Bob Mullen of TSMC gave a presentation on their new custom FinFET flow, doing design, and verifying designs. At 16nm there are all sorts of relatively new verification problems such as layout dependent effects (LDE) and voltage dependent design rules. We had some of this at 20nm but like most things in semiconductor, it gets harder with each process generation. I'm going to leave verification until another blog.


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